Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 327-333

  Sugahara, Satoshi ^a   Hosaka, Kimihiko ^a   Matsumura, Masakiyo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; EPITAXIAL GROWTH; HYDROGEN; ORGANOMETALLICS; REACTION KINETICS; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA;

ABSTRACTION REACTION; ATOMIC LAYER EPITAXY; DIMETHYLGERMANE; ELEY-RIDEAL MECHANISM;

SEMICONDUCTING GERMANIUM;

EID: 17344380107     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00079-8     Document Type: Article

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