70 nm silicon-oxide-nitride-oxide-silicon nonvolatile memory devices using fowler-nordheim programming and hot hole erase method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2207-2210

  Chae, Soodoo ^a   Lee, Changju ^b   Kim, Juhyung ^a   Sung, Sukkang ^b   Sim, Jaeseong ^b   Kim, Moonkyung ^a   Yoon, Sewook ^a   Jeong, Younseok ^a   Ryu, Wonil ^a   Kim, Taehun ^b   Park, Byung Gook ^b   Lee, Jo Won ^a   Kim, Chungwoo ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

70 nm SONOS; Fowler Nordheim program; Hot hole injection; Ultra thin ONO film

Indexed keywords

ANNEALING; DEGRADATION; ELECTRON TRAPS; ELECTRON TUNNELING; PROM; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; WSI CIRCUITS;

FOWLER-NORDHEIM PROGRAMS; HOT HOLE ERASE METHOD; HOT HOLE INJECTIONS; ULTRA-THIN ONO FILMS;

NONVOLATILE STORAGE;

EID: 17044447507     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2207     Document Type: Conference Paper

References (8)

1. M. H. White, D. A. Adams and J. Bu: IEEE Circuits & Devices Mag. 16 (2000) No. 4, 22.
2. The International Technology Roadmap for Semiconductors (ITRS) (2001) Table 38a, 38b.
3. J. Bu and M. H. White: IEEE Electron Device Lett. 22 (2001) 17.
4. F. R. Libsch and M. H. White: Solid State Electron. 33 (1990) 105.
5. M. L. French, C. Y. Chen, H. Sathianathan and M. H. White: IEEE Trans. Components, Packag. & Manufact. Technol. A 17 (1994) 390.
6. C. Lee, S. Hur, Y. Shin, J. Choi, D. Park and K. Kim: Ext. Abstr. 2002 Int. Conf. Solid State Devices & Materials (Nagoya Congress Center, Japan, Nagoya, 2002) p. 162.
7. Y. Shin, C Lee, S. Hur, J. Choi and K. Kim: Non-Volatile Semiconductor Memory Workshop (2003) 58.
8. J. Bu and M. H. White: IEEE Electron Device Lett. 22 (2001) 162.