Passivation effect of AlLiF electrode on C60 diodes

Applied Physics Letters

Volumn 86, Issue 3, 2005, Pages 1-3

  Huang, C J ^a   Grozea, D ^a   Turak, A ^a   Lu, Z H ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRODES; EVAPORATION; FULLERENES; INTERFACES (MATERIALS); LITHIUM COMPOUNDS; OHMIC CONTACTS; OXYGEN; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS;

MOTT-GURNEY LAW; RECTIFICATION RATIO; ROBUST DEVICES; TEMPERATURE DEPENDENCE;

DIODES;

EID: 17044433044     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1854193     Document Type: Article

References (15)

1. H. W. Kroto, J. R. Heath, S. C. Obrien, R. F. Curl, and R. E. Smalley, Nature (London) 318, 162 (1985).
2. B. Miller, J. M. Rosamilia, G. Dabbagh, R. Tycko, R. C. Haddon, A. J. Muller, W. Wilson, D. W. Murphy, and A. F. Hebard, J. Am. Chem. Soc. 113, 6291 (1991).
3. R. C. Haddon, A. S. Perel, R. C. Morris, T. T. M. Palstra, A. F. Hebard, and R. M. Fleming, Appl. Phys. Lett. 67, 121 (1995).
4. L. P. Ma, J. Ouyang, and Y. Yang, Appl. Phys. Lett. 84, 4786 (2004).
5. X. D. Feng, C. J. Huang, V. Lui, R. Khangura, and Z. H. Lu (unpublished).
6. H. Yonehara and C. Pac, Appl. Phys. Lett. 61, 575 (1992).
7. C. H. Lee, G. Yu, D. Moses, A. J. Heeger, and V. I. Srdanov, Appl. Phys. Lett. 65, 664 (1994).
8. A. Hamed, Y. Y. Sun, Y. K. Tao, R. L. Meng, and P. H. Hor, Phys. Rev. B 47, 10873 (1993).
9. K. Horiuchi, K. Nakada, S. Uchino, S. Hashii, A. Hashimoto, N. Aoki, Y. Ochiai, and M. Shimizu, Appl. Phys. Lett. 81, 1911 (2002).
10. S. Han, X. Feng, Z. H. Lu, D. Johnson, and R. Wood, Appl. Phys. Lett. 82, 2715 (2003).
11. V. I. Arkhipov, E. V. Emelianova, Y. H. Tak, and H. Bassler, J. Appl. Phys. 84, 848 (1998).
12. B. Pevzner, A. F. Hebard, and M. S. Dresselhaus, Phys. Rev. B 55, 16439 (1997).
13. M. Pope and C. E. Swenberg, Electronic Process in Organic Crystals and Polymers (Oxford University Press, New York, 1999).
14. T. L. Makarova, Semiconductors 35, 243 (2001); and references therein.
15. D. Grozea, A. Turak, X. D. Feng, Z. H. Lu, D. Johnson, and R. Wood, Appl. Phys. Lett. 81, 3173 (2002).