Corner overgrowth: Bending a high mobility two-dimensional electron system by 90°

Applied Physics Letters

Volumn 86, Issue 3, 2005, Pages 1-3

  Grayson, M ^a   Schuh, D ^a   Huber, M ^a   Bichler, M ^a   Abstreiter, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRONIC EQUIPMENT; ELECTRONS; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; HALL EFFECT; HEAT FLUX; HETEROJUNCTIONS; SURFACE WATERS; THERMAL EFFECTS;

CORNER OVERGROWTH; ELECTRON DISTRIBUTION; HIGH-MOBILITY ELECTRONS; TWO-DIMENSIONAL ELECTRON SYSTEM;

BENDING (DEFORMATION);

EID: 17044426329     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1851010     Document Type: Article

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