Novel cleaved edge overgrowth structures for tunneling into one- and two-dimensional electron systems

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 233-236

  Grayson, M ^a   Kurdak, C ^a   Tsui, D C ^a   Parihar, S ^a   Lyon, S ^a   Shayegan, M ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GEOMETRY; LEAKAGE CURRENTS; MAGNETIC FIELDS; MOLECULAR BEAM EPITAXY; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

CLEAVED EDGE OVERGROWTH; QUANTUM CONFINEMENT; RESONANT TUNNELING DIODE;

ELECTRON TUNNELING;

EID: 0029703126     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00255-3     Document Type: Article

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