Uniaxial strained silicon CMOS devices for high performance logic nanotechnology

Proceedings - Electrochemical Society

Volumn 7, Issue , 2004, Pages 681-692

  Ghani, T ^a   Armstrong, M ^a   Auth, C ^a   Giles, M D ^b   Mistry, K ^a   Murthy, A ^a   Shifren, L ^b   Thompson, S ^a   Bohr, M ^a  

^a Portland Technology Development   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL STRAIN; STRAIN LEVEL; STRAIN RESPONSE; UNIAXIAL STRAIN;

CARRIER MOBILITY; ETCHING; MATHEMATICAL MODELS; NANOTECHNOLOGY; OSCILLATORS (ELECTRONIC); PERFORMANCE; STRAIN; THIN FILMS;

CMOS INTEGRATED CIRCUITS;

EID: 17044416932     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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