Measurement of microwave dielectric properties of Pb(Zr1-x Tr x )O3 thin films

Journal of Electroceramics

Volumn 13, Issue 1-3, 2004, Pages 257-260

  Moon, Seung Eon ^a   Kim, Eun Kyoung ^a   Lee, Su Jae ^a   Kwak, Min Hwan ^a   Kim, Young Tae ^a   Ryu, Han Cheol ^a   Kim, Won Jeong ^b   Song, Tae Kwun ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Changwon National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; ETCHING; LEAD COMPOUNDS; MICROWAVE DEVICES; MORPHOLOGY; PERMITTIVITY; PHOTOLITHOGRAPHY; POLYCRYSTALLINE MATERIALS; SOL-GELS; SURFACES; X RAY DIFFRACTION ANALYSIS;

INFRARED SENSORS; METAL-FERROELECTRIC-METAL (MFM) TRILAYER STRUCTURES; NON-VOLATILE FERROELECTRIC RANDOM ACCESS MEMORY (NVFRAM); PB(ZR1-XTIX)O3 (PZT);

FERROELECTRIC THIN FILMS;

EID: 17044410446     PISSN: 13853449     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10832-004-5108-9     Document Type: Conference Paper

References (6)

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