A DC-10GHz linear-in-dB attenuator in 0.13μm CMOS technology

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2004, Pages 609-612

  Dogan, Hakan ^a   Meyer, Robert G ^a   Niknejad, Ali M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS ATTENUATOR; CMOS TECHNOLOGY; RESISTOR NETWORKS; SIGNAL PATHS;

CMOS INTEGRATED CIRCUITS; CODE DIVISION MULTIPLE ACCESS; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; ENERGY DISSIPATION; GAIN CONTROL; MICROPROCESSOR CHIPS; MODEMS; NATURAL FREQUENCIES; SIGNAL RECEIVERS;

ELECTRIC ATTENUATORS;

EID: 17044399344     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Fisher, D., Dobkin, D., "A Temperature-Compensated Linearizing Technique for MMIC Attenuators Utilizing GaAs MESFETs as Voltage-Variable Resistors," IEEE MTT-S Digest, Dallas, USA, May 1990, pp. 781-784.
2. Kaunisto, R., Korpi, P., Kiraly, J., Halonen, K., "A Linear-Control Wide-Band CMOS Attenuator," International Symposium on Circuits and Systems, 2001, Volume:4, pp. 458-461.
3. Kondoh, H., "DC-50GHz MMIC Variable Attenuator with a 30dB Dynamic Range," IEEE MTT-S Digest, New York, USA, Jun. 1988, pp. 499-502.
4. Maoz, B., "A Novel, Linear Voltage Variable MMIC Attenuator," IEEE Trans. Microwave Theory and Techniques, Nov. 1990, Vol. 38, No. 11, pp. 1675-1683.
5. Vavelidis, K., Tsividis, Y. P., Eynde, F. O., Papananos, Y., "Six Terminal MOSFET's: Modeling and Applications in Highly Linear, Electronically Tunable Resistors," IEEE JSSC, Jan. 1997, pp. 4-12.
6. Bayruns, R., et al, "The Bootstrapped Gate FET (BGFET) - A New Control Transistor," IEEE GaAs IC Symposium, 1995, pp. 136-139.
7. Sansen, W. M. C., Meyer, R. G., "Distortion in Bipolar Transistor Variable-Gain Amplifiers," IEEE JSSC, Aug. 1973, Vol. SC-8, No. 4,pp. 275-282.