Six-terminal MOSFET's: Modeling and applications in highly linear, electronically tunable resistors

IEEE Journal of Solid-State Circuits

Volumn 32, Issue 1, 1997, Pages 4-11

  Vavelidis, Kostas ^b   Tsividis, Yannis P ^{a,b,c,e,f,g,h,i,j}   Op't Eynde, Frank ^{a,d,h,k,l,m,n,o,p}   Papananos, Yannis ^a,b  

^a IEEE

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^c Natl Technical University of Athens ^*  (United States)

^d Mixed Silicon Structures   (France)

^e UNIVERSITY OF MINNESOTA   (United States)

^f UNIVERSITY OF CALIFORNIA   (United States)

^g MOTOROLA INC   (United States)

^h LUCENT TECHNOLOGIES   (United States)

ⁱ MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^j U Nations Advsy Comm Sci T

^k UNIVERSITY OF LEUVEN   (Belgium)

^l PHILIPS RESEARCH LABORATORIES   (Netherlands)

^m INFO Group   (France)

ⁿ FREE UNIVERSITY OF BRUSSELS   (Belgium)

^o UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

^p TRANSILVANIA UNIVERSITY OF BRASOV   (Romania)

more..

Author keywords

Analog integrated circuits; BiCMOS analog integrated circuits; MOS devices; MOSFET linearization; Resistive gate resistive body devices; Resistors; Six terminal MOSFET's

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC DISTORTION; MOS DEVICES; RESISTORS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

ELECTRONICALLY TUNABLE RESISTORS; INVERSION MODELS;

MOSFET DEVICES;

EID: 0030871572     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.553170     Document Type: Article

References (17)

1. Y. Tsividis and K. Vavelidis, "Linear, electronically tunable resistor," Electron. Lett., vol. 28, no. 25, pp. 2303-2305, 1992; erratum, ibid., vol. 39, no. 6, 18 Mar. 1993.
2. K. Vavelidis and Y. Tsividis, "Design consideration for a highly linear electronically tunable resistor," in Proc. IEEE/ISCAS, Chicago, IL, 1993, pp. 1180-1183.
3. R. S. Muller and J. R. Schroeder, "Properties of a field-aided IGFET," in IEEE German Physics Society - Society of Electrical Engineers European Meeting: Semiconductor Device Reserch, Munich, Germany, Mar. 24-27, 1969, pp. S1-7.
4. T. Yamada, Y. Hirata, and S. Sato, "New field effect device with linear I-V characteristics," in Dig. Tech. Papers, 1974 IEEE Int. Electron Devices Meeting, Wahington, DC, pp. 533-536.
5. N. Coen and R. S Muller, "Velocity of surface carriers in inversion layers on silicon," Solid-State Electron., vol. 23, pp. 35-40, 1980.
6. Y. P. Tsividis, Operation and Modeling of the MOS Transistor. New York: McGraw-Hill, 1987.
7. H. K. Ihantola and J. L. Moll, "Design theory of a surface field-effect transistor," Solid-State Electron., vol. 7, pp. 423-430, 1964.
8. G. Mercel, J. Borel, and N. Cupcea, "An accurate large-signal model for use in computer-aided design," IEEE Trans. Electron Devices, vol. ED-19, pp 681-690, 1972.
9. M. H. White, F. V. Wiele, and J.-P. Lambot, "High-accuracy MOS models for computer-aided design," IEEE Trans. Electron Devices, vol. ED-27, pp. 899-906, 1980.
10. E. Demoulin and F. Van de Wiele, "Ion implanted MOS transistors," in Process and Device Modeling for Integrated Circuit Design, F. Van de Wiel, W. L. Engl, and P. G. Jespers, Eds. Leyden, The Netherlands: Noordhoff, 1977.
11. G. Mercel, "Ion implanted MOS transistors - depletion mode devices," in Process and Device Modeling for Integrated Circuit Design, F. Van de Wiele, W. L. Engl, and P. G. Jespers, Eds. Leyden, The Netherlands: Noordhoff, 1977, pp. 617-676.
12. L. Vadasz, "The use of MOS structure for the design of high value resistors in monolithic integrated circuits," IEEE Trans. Electron Devices, vol. ED-13, pp. 459-465, May 1966.
13. A. Bilotti, "Operation of the MOS transistor as a variable resistor," Proc. IEEE. vol. 54. pp. 1093-1094, Aug. 1966.
14. Y. Tsividis, M. Banu, and J. Khoury, "Continuous-time MOSFET-C filters in VLSI," IEEE J. Solid-State Circuits, vol. SC-21, pp. 15-30, Feb. 1986.
15. W. R. Patterson and F. S. Shoucair, "Harmonic suppression in unbalanced analogue MOSFET circuit topologies using body signals," Electron. Lett., vol. 25, pp. 1737-1739, Dec. 7, 1989.
16. M. Akiya, S. Nakashima, and K. Kato, "A wide range linear variable resistor by buried channel MOS/SIMOX," IEEE J. Solid-State Circuits, vol. SC-19, pp. 526-531, Aug. 1984.
17. M. Sato, K. Suzuki, and K. Akutsu, "A volume and tone control IC for Hi-Fi audio," IEEE J. Solid-State Circuits, vol. SC-16, pp. 682-689, Dec. 1981.