Poly(3-hexylthiophene) field-effect transistor with controllable threshold voltage

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 1 B, 2005, Pages 621-625

  Nishimura, Haruka ^a   Iizuka, Masaaki ^a   Sakai, Masatoshi ^a   Nakamura, Masakazu ^a   Kudo, Kazuhiro ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

Inverter circuit; Organic FET; Organic IC; P3HT; Threshold voltage

Indexed keywords

COST EFFECTIVENESS; ELECTRIC FIELD EFFECTS; HEAT TREATMENT; INTEGRATED CIRCUITS; POLYTETRAFLUOROETHYLENES; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

INVERTER CIRCUIT; ORGANIC FET; ORGANIC IC; POLY(3-HEXYLTHIOPHENE) FIELD-EFFECT TRANSISTORS (P3HT-FET);

FIELD EFFECT TRANSISTORS;

EID: 17044390171     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.621     Document Type: Conference Paper

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