High power 1060-nm raised-ridge strained single-quantum-well lasers

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2004, Pages 39-40

  Zah, Chung En ^a   Li, Yabo ^a   Bhat, Rajaram ^a   Song, Kechang ^a   Visovsky, Nick ^a   Nguyen, Hong Ky ^a   Liu, Xingsheng ^a   Hu, Martin ^a   Nishiyama, Nobuhiko ^a  

^a Corning Incorporated ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; ELECTRIC CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR GROWTH; SINGLE MODE FIBERS; STRAIN; THERMAL EFFECTS;

FULL WIDTH HALF MAXIMUM (FWHM); KINK FREE POWERS; KINKS; SINGLE-QUANTUM-WELL LASERS;

QUANTUM WELL LASERS;

EID: 17044364722     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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2. G M. Smith, et al., Proceedings of 16th LEOS Annual Meeting, Tucson, AZ, October. 27-28, 2003, vol. 1, pp 417-418.
3. M. Yuda, et al., IEEE, Journal of Quantum Electronics, vol. 9, no. 12, pp 1515-1520, December. 2003
4. R. M. Lammert, et al., Electronics Letters, vol 34, no. 17, pp 1663-1664. August 1998.
5. L. Hofmann, et al., Electronics Letters, vol. 36, no. 1, pp 38-39, January. 2000.
6. M. H. Hu et al, Proceedings of APOC, Shanghai, China, October 16-18, 2002, SPIE, vol. 4905, pp 32-36.