SCOPUS 정보 검색 플랫폼

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 313-318

The magnesium related luminescence in silicon and its quenching due to the presence of dislocations

(3) Steinman, E A a Leipner, H S b Grimmeiss, H G c

a INSTITUTE OF SOLID STATE PHYSICS (Russian Federation)

b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG (Germany)

c LUND UNIVERSITY (Sweden)

Author keywords

Dislocations; Luminescence; Magnesium; Silicon

Indexed keywords

CARRIER CONCENTRATION; DEFECTS; DISLOCATIONS (CRYSTALS); EXCITONS; LUMINESCENCE; MAGNESIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; EMISSION SPECTROSCOPY; PLASTIC DEFORMATION; QUENCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

BOUND EXCITON; DEFORMED SAMPLES; ENERGY POSITION; EXCITON BOUND; IDENTICAL CONDITIONS; LUMINESCENCE SPECTRUM; SET OF LINES; TEMPERATURE BEHAVIOR;

MAGNESIUM COMPOUNDS; PHOTOLUMINESCENCE;

EXCITON RECOMBINATION;

EID: 16944366583 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: 10.4028/www.scientific.net/ssp.57-58.313 Document Type: Article

Times cited : (3)

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