X-ray excited spectroscopy of defects and impurities in compound semiconductors

Materials Science in Semiconductor Processing

Volumn 6, Issue 5-6, 2003, Pages 267-271

  Takeda, Y ^a,b  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Capacitance; Fluorescence X ray; Impurity; Local structure; Photoluminescence; XAFS

Indexed keywords

CAPACITANCE; ELECTRIC INSULATORS; ERBIUM; IMPURITIES; OPTICAL PROPERTIES; ORGANOMETALLICS; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SILICA; SURFACE PHENOMENA; X RAY SPECTROSCOPY;

FLUORESCENCE X-RAY; LOCAL STRUCTURES; XAFS;

SEMICONDUCTOR MATERIALS;

EID: 1642603017     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2003.07.001     Document Type: Conference Paper

References (5)

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