Amphoteric nature of vacancies in zinc blende semiconductors

Materials Science in Semiconductor Processing

Volumn 6, Issue 5-6, 2003, Pages 281-284

  Chadi, D J ^a  

^a NEC LABORATORIES AMERICA   (United States)

Author keywords

Defects; II VI semiconductors; III V semiconductors; Vacancy

Indexed keywords

CHEMICAL BONDS; CHEMICAL RELAXATION; CRYSTAL DEFECTS; CRYSTAL LATTICES; DIMERIZATION; FERMI LEVEL; GALLIUM NITRIDE; POSITIVE IONS; SEMICONDUCTOR DOPING; ZINC;

II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; VACANCIES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1642587282     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2003.05.010     Document Type: Conference Paper

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