A Difference in the Change of Parameters of Silicon-on-Sapphire Structures upon X-ray Irradiation from the Sides of Epitaxial Layer and Substrate

Technical Physics Letters

Volumn 29, Issue 12, 2003, Pages 971-973

  Kiselev, A N ^a   Perevoshchikov, V A ^a   Skupov, V D ^a   Filatov, D O ^a  

^a LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1642580823     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1639445     Document Type: Article

References (4)

1. A. N. Kiselev, V. A. Perevoshchikov, V. D. Skupov, and D. O. Filatov, Pis'ma Zh. Tekh. Fiz. 27 (17), 35 (2001) [Tech. Phys. Lett. 27, 725 (2001)].
2. A. N. Kiselev, V. A. Perevoshchikov, V. D. Skupov, and D. O. Filatov, Pis'ma Zh. Tekh. Fiz. 27 (17), 35 (2001) [Tech. Phys. Lett. 27, 725 (2001)].
3. P. V. Pavlov, Yu. A. Semin, V. D. Skupov, and D. I. Tetel'baum, Fiz. Tekh. Poluprovodn. (Leningrad) 20, 503 (1986) [Sov. Phys. Semicond. 20, 315 (1986)].
4. P. V. Pavlov, Yu. A. Semin, V. D. Skupov, and D. I. Tetel'baum, Fiz. Tekh. Poluprovodn. (Leningrad) 20, 503 (1986) [Sov. Phys. Semicond. 20, 315 (1986)].