X-ray irradiation at subthreshold energies modifies the surface micromorphology of epitaxial silicon layers on sapphire

Technical Physics Letters

Volumn 27, Issue 9, 2001, Pages 725-727

  Kiselev, A N ^a   Perevoshchikov, V A ^a   Skupov, V D ^a   Filatov, D O ^a  

^a LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035538172     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1405240     Document Type: Article

References (8)

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7. P. V. Pavlov, Yu. A. Semin, and V. D. Skupov, Fiz. Tekh. Poluprovodn. (Leningrad) 20 (3), 503 (1986) [Sov. Phys. Semicond. 20, 315 (1986)].
8. V. L. Vinetskiǐ and G. A. Kholodar', Radiation Physics of Semiconductors (Naukova Dumka, Kiev, 1979).