Recombination in n-i-p (substrate) a-Si:H solar cells with silicon carbide and protocrystalline p-layers

Materials Research Society Symposium - Proceedings

Volumn 762, Issue , 2003, Pages 351-356

  Vlahos, V ^a   Deng, J ^a   Pearce, J M ^a   Koval, R J ^b   Ferreira, G M ^a   Collins, R W ^a   Wronski, C R ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; ELECTRIC POTENTIAL; HYDROGENATION; INTERFACES (MATERIALS); NETWORKS (CIRCUITS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SPUTTER DEPOSITION;

CARRIER RECOMBINATION; PROTOCRYSTALLINE CELLS;

SILICON SOLAR CELLS;

EID: 1642561591     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-762-a7.2     Document Type: Conference Paper

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