Modeling and Correction of Global CD Uniformity Caused by Fogging and Loading Effects in 90nm Node CAR Processes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5130, Issue , 2003, Pages 78-85

  Park, Dong Il ^a   Park, Eui Sang ^a   Lee, Jong Hwa ^a   Jeong, Woo Gun ^a   Seo, Soon Kyu ^a   Kwon, Hyuk Joo ^a   Kim, Jin Min ^a   Jung, Sung Mo ^a   Choi, Sang Soo ^a  

^a Photomask R and D Center   (South Korea)

Author keywords

Chemically amplified resist; Convolution equation; Fogging effect; Loading effect; Phantom exposure

Indexed keywords

CONVOLUTION; ERROR DETECTION; ETCHING; MASKS; MATHEMATICAL MODELS;

CHEMICALLY AMPLIFIED RESIST (CAR); CONVOLUTION EQUATIONS; CRITICAL DIMENSIONS (CD); FOGGING EFFECTS; LOADING EFFECTS; NODE MASK PRODUCTIONS; PHANTOM EXPOSURE;

ELECTRON BEAMS;

EID: 1642555766     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.504051     Document Type: Conference Paper

References (4)

1. Yo-Han Choi, "A Simple Method for Separating and Evaluating Origins of a Side Error in Mask CD Uniformity: Photomask Blanks and Mask-making Processes", SPIE, Vol. 4889, 819, 2002.
2. Satoshi Yamaski, "Performance Evaluation of Representative Figure Method for Proximity Effect Correction", Japanese Journal of Applied Physics, Vol. 30, 3103, 1991
3. Hyuk-Joo Kwon, "Dry Etching of Cr layer and Its Loading Effect", SPIE, Vol, 4409, 382, 2001.
4. Hyuk-Joo Kwon, "Loading Effect Parameters at Dry Etcher System and Their Analysis at Mask-to-mask Loading and Within-mask Loading", SPIE, Vol. 4562, 79, 2002.