Oxygen Ion Bombardment for Local Oxide Formation in Si

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 77-82

  Kruger D ^a   Kurps, R ^a   Formanek, P ^a   Weidner, G ^a  

^a IHP   (Germany)

Author keywords

Defects; Implantation; Oxide Formation; Oxygen; SIMS; TEM

Indexed keywords

AMORPHIZATION; AMORPHOUS FILMS; ANNEALING; ATOMIC FORCE MICROSCOPY; COMPOSITION; ELECTRON HOLOGRAPHY; ELECTRON MICROSCOPY; ELECTRON TRANSITIONS; EROSION; ION BOMBARDMENT; ION IMPLANTATION; MORPHOLOGY; SECONDARY ION MASS SPECTROMETRY; SPUTTERING; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

OXYGEN IMPLANTATION; SURFACE RECESSION; TRANSIENT PERIODS;

SEMICONDUCTING SILICON;

EID: 1642516022     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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