Variation of carrier removal rate with irradiation dose in fast-pile neutron irradiated n-Si

Physica Status Solidi (A) Applied Research

Volumn 179, Issue 1, 2000, Pages 179-188

  Dolgolenko, A P ^a  

^a INSTITUTE FOR NUCLEAR RESEARCH   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC SPACE CHARGE; KINETIC THEORY; NEUTRON IRRADIATION; PHOSPHORUS; POINT DEFECTS; THERMAL EFFECTS;

CARRIER REMOVAL RATE; CONDUCTING MATRIX; DEEP ACCEPTOR LEVELS; IRRADIATION DOSE;

SEMICONDUCTING SILICON;

EID: 0033726677     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200005)179:1<179::AID-PSSA179>3.0.CO;2-3     Document Type: Article

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