High thermoelectric performance at low temperature of p-Bi 1.8Sb0.2Te3.0 grown by the gradient freeze method from Te-rich melt

Journal of Alloys and Compounds

Volumn 368, Issue 1-2, 2004, Pages 44-50

  Huong, Ngo Thu ^a,c   Setou, Yusuke ^a   Nakamoto, Go ^a   Kurisu, Makio ^a   Kajihara, Takeshi ^b   Mizukami, Hiroyuki ^b   Sano, Seijiro ^b  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b KOMATSU LTD   (Japan)

^c VIETNAM NATIONAL UNIVERSITY   (Viet Nam)

Author keywords

Crystal growth; Electronic transport; Semiconductors; Thermoelectricity; X ray diffraction

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; SEEBECK EFFECT; SEMICONDUCTOR MATERIALS; SOLID SOLUTIONS; TELLURIUM; X RAY DIFFRACTION ANALYSIS;

ELECTRON PROBE MICROANALYSIS (EPMA); THERMOELECTRIC EFFICIENCY;

BISMUTH ALLOYS;

EID: 1642483721     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2003.08.066     Document Type: Article

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