Advanced NLD mask dry etching system for 90nm node technology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5130, Issue , 2003, Pages 275-280

  Harashima, Noriyuki ^a   Sasaki, Takaei ^a   Kuwahara, Kiyoshi ^a   Hayashi, Toshio ^a   Tanaka, Yoshiyuki ^b   Yoshioka, Nobuyuki ^b   Hara, Mutsumi ^c   Ohkubo, Yasushi ^c  

^a ULVAC INC   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^c HOYA CORPORATION   (Japan)

Author keywords

CD uniformity; Loading effect; Mask dry etching; NLD plasma

Indexed keywords

BYPRODUCTS; CARRIER CONCENTRATION; DRY ETCHING; ELECTRIC CHARGE; LITHOGRAPHY; OPTIMIZATION; PLASMAS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON WAFERS;

CD UNIFORMITY; LOADING EFFECTS; MAGNETIC NEUTRAL LOOP DISCHARGE (NLD); MASK DRY ETCHING; NLD PLASMA;

MASKS;

EID: 1642474144     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.504200     Document Type: Conference Paper

References (3)

1. Y. Tanaka, N. Yoshioka, N. Harashima, T. Sasaki, M. Hara and Y. Ohkubo, "Improved of NLD mask dry etching system for 100nm node technology", Proc., 22nd Annual BACUS Symposium on Photomask Technology, SPIE Vol.4889 (2002), p 619-625
2. T. Fujisawa, T. Iwamatsu, K. Hiruta, H. Moriomoto, N. Harashima, T. Sasaki, M. Hara, K. Yamashiro, Y. Ohkubo and Y. Takehana, "Evaluation of loading effect of NLD dry etching(2)", Proc., 20th Annual BACUS Symposium on Photomask Technology, SPIE Vol.4186 (2000), p 549-552
3. Hyuk-Joo Kwon, Dong-Soo Min, Pil-Jin Jang, Byung-Soo Chang, Boo-Yeon Choi, Kyung-Ho Park, Soo-Hong Jeong, "Dry Etching of Cr layer and Its Loading Effect", Photomask and Next-Generation Lithography mask Technology VIII, SPIE Vol.4409 (2001), p382-389