Limit of validity of the drift-diffusion approximation for simulation of photodiode characteristics

Applied Physics Letters

Volumn 84, Issue 8, 2004, Pages 1398-1400

  Konno, K ^a   Matsushima, O ^a   Navarro, D ^a   Miura Mattausch, M ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; DIFFUSION; ELECTRIC FIELD EFFECTS; ELECTRIC SPACE CHARGE; SEMICONDUCTING SILICON;

DRIFT-DIFFUSION APPROXIMATION; MOBILITY MODEL;

PHOTODIODES;

EID: 1642398237     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1650033     Document Type: Article

References (23)

1. See for example, L. C. Kimerling, Appl. Surf. Sci. 159-160, 8 (2000).
2. MEDICI User's Manual, Synopsys (2002).
3. W. Shockley, Electrons and Holes in Semiconductors (Van Nostrand, Princeton, NJ, 1950).
4. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
5. C. M. Snowden, Introduction to Semiconductor Device Modeling (World Scientific, Singapore, 1986).
6. G. Lucovsky, R. F. Schwarz, and R. B. Emmons, J. Appl. Phys. 35, 622 (1964).
7. J. E. Bowers and C. A. Burrus, J. Lightwave Technol. LT-5, 1339 (1987).
8. R. Sabella, IEEE J. Quantum Electron. 29, 906 (1993).
9. J. B. Radunović and D. M. Gvozdić, IEEE Trans. Electron Devices 40, 1238 (1993).
10. Y. Leblebici, M. Selim Ünlü, S.-M. Kang, and B. M. Onat, J. Lightwave Technol. 13, 396 (1995).
11. M. Selim Ünlü, B. M. Onat, and Y. Leblebici, J. Lightwave Technol. 13, 406 (1995).
12. P. S. Matavulj, D. M. Gvozdić, and J. B. Radunović, J. Lightwave Technol. 15, 2270 (1997).
13. G. Torrese, A. Salamone, I. Huynen, and A. V. Vorst, Microwave Opt. Technol. Lett. 31, 329 (2001).
14. M. Dentan and B. de Cremoux, J. Lightwave Technol. 8, 1137 (1990); R. D. Esman and K. J. Williams, IEEE Photonics Technol. Lett. 2, 502 (1990); K. J. Williams and R. D. Esman, Electron. Lett. 28, 731 (1992); A. R. Williams, A. L. Kellner, X. S. Jiang, and P. K. L. Yu, ibid. 28, 2258 (1992); R. R. Hayes and D. L. Persechini, IEEE Photonics Technol. Lett. 5, 70 (1993); K. J. Williams, R. D. Esman, and M. Dagenais, ibid. 6, 639 (1994).
15. M. Dentan and B. de Cremoux, J. Lightwave Technol. 8, 1137 (1990); R. D. Esman and K. J. Williams, IEEE Photonics Technol. Lett. 2, 502 (1990); K. J. Williams and R. D. Esman, Electron. Lett. 28, 731 (1992); A. R. Williams, A. L. Kellner, X. S. Jiang, and P. K. L. Yu, ibid. 28, 2258 (1992); R. R. Hayes and D. L. Persechini, IEEE Photonics Technol. Lett. 5, 70 (1993); K. J. Williams, R. D. Esman, and M. Dagenais, ibid. 6, 639 (1994).
16. M. Dentan and B. de Cremoux, J. Lightwave Technol. 8, 1137 (1990); R. D. Esman and K. J. Williams, IEEE Photonics Technol. Lett. 2, 502 (1990); K. J. Williams and R. D. Esman, Electron. Lett. 28, 731 (1992); A. R. Williams, A. L. Kellner, X. S. Jiang, and P. K. L. Yu, ibid. 28, 2258 (1992); R. R. Hayes and D. L. Persechini, IEEE Photonics Technol. Lett. 5, 70 (1993); K. J. Williams, R. D. Esman, and M. Dagenais, ibid. 6, 639 (1994).
17. M. Dentan and B. de Cremoux, J. Lightwave Technol. 8, 1137 (1990); R. D. Esman and K. J. Williams, IEEE Photonics Technol. Lett. 2, 502 (1990); K. J. Williams and R. D. Esman, Electron. Lett. 28, 731 (1992); A. R. Williams, A. L. Kellner, X. S. Jiang, and P. K. L. Yu, ibid. 28, 2258 (1992); R. R. Hayes and D. L. Persechini, IEEE Photonics Technol. Lett. 5, 70 (1993); K. J. Williams, R. D. Esman, and M. Dagenais, ibid. 6, 639 (1994).
18. M. Dentan and B. de Cremoux, J. Lightwave Technol. 8, 1137 (1990); R. D. Esman and K. J. Williams, IEEE Photonics Technol. Lett. 2, 502 (1990); K. J. Williams and R. D. Esman, Electron. Lett. 28, 731 (1992); A. R. Williams, A. L. Kellner, X. S. Jiang, and P. K. L. Yu, ibid. 28, 2258 (1992); R. R. Hayes and D. L. Persechini, IEEE Photonics Technol. Lett. 5, 70 (1993); K. J. Williams, R. D. Esman, and M. Dagenais, ibid. 6, 639 (1994).
19. M. Dentan and B. de Cremoux, J. Lightwave Technol. 8, 1137 (1990); R. D. Esman and K. J. Williams, IEEE Photonics Technol. Lett. 2, 502 (1990); K. J. Williams and R. D. Esman, Electron. Lett. 28, 731 (1992); A. R. Williams, A. L. Kellner, X. S. Jiang, and P. K. L. Yu, ibid. 28, 2258 (1992); R. R. Hayes and D. L. Persechini, IEEE Photonics Technol. Lett. 5, 70 (1993); K. J. Williams, R. D. Esman, and M. Dagenais, ibid. 6, 639 (1994).
20. C. Moglestue, J. Rosenzweig, J. Kuhl, M. Klingenstein, M. Lambsdorff, A. Axmann, Jo. Schneider, and A. Hulsmann, J. Appl. Phys. 70, 2435 (1991).
21. See, for example, A. Rose, Phys. Rev. 97, 1538 (1955); M. A. Lampert, ibid. 103, 1648 (1956); A. Many and G. Rakavy, ibid. 126, 1980 (1962).
22. See, for example, A. Rose, Phys. Rev. 97, 1538 (1955); M. A. Lampert, ibid. 103, 1648 (1956); A. Many and G. Rakavy, ibid. 126, 1980 (1962).
23. See, for example, A. Rose, Phys. Rev. 97, 1538 (1955); M. A. Lampert, ibid. 103, 1648 (1956); A. Many and G. Rakavy, ibid. 126, 1980 (1962).