A fully analytical model to describe the high-frequency behaviour of p-i-n photodiodes

Microwave and Optical Technology Letters

Volumn 31, Issue 5, 2001, Pages 329-333

  Torrese, G ^a   Salamone, A ^a   Huynen, I ^a   Vander Vorst, A ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

Bandwidth; Modelling of high frequency devices; p i n photodetector

Indexed keywords

BANDWIDTH; CRYSTAL LATTICES; ELECTRIC FIELD EFFECTS; MATHEMATICAL MODELS; PHOTODETECTORS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE;

HIGH-FREQUENCY DEVICES;

PHOTODIODES;

EID: 0035814183     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.10026     Document Type: Article

References (11)

1. The influence of nonstationary carrier transport on the bandwidth of p-i-n photodiode
2. Transient simulation of heterojunction photodiodes - Part I: Computational methods
3. Transit-time consideration in p-i-n diodes
4. Ultrawide-band long-wavelength p-i-n photodetectors
5. Analysis of InGaAs P-I-N photodiode frequency response
6. High-speed response of uni-travelling-carrier photodiodes
7. InGaAs PIN photodetectors with modulation response to millimetre wavelengths
8. Transient simulation of heterojunction photodiodes - Part II: Analysis of resonant cavity enhanced photodetectors
9. Carrier mobilities in silicon empirically related to doping profile and field
10. A travelling-wave model for optimizing the bandwidth of p-i-n photodetectors in silicon-on-insulator technology