Electron g factor in a gated InGaAs channel with double InAs-inserted wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 656-660

  Lin, Y ^a,b   Nitta, J ^a,b   Koga, T ^a,b   Akazaki, T ^a,b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

g factor; InAlAs; InGaAs; Quantum well

Indexed keywords

ANISOTROPY; BAND STRUCTURE; HETEROJUNCTIONS; MAGNETIC FIELDS; MATHEMATICAL MODELS; PHOTOLITHOGRAPHY; PROBABILITY; SEMICONDUCTING INDIUM;

G FACTOR; INALAS; INGAAS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1642382416     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.098     Document Type: Conference Paper

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