Surface integral determination of built-in electric fields and analysis of exciton binding energies in nitride-based quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 358-362

  Williams, D P ^a   Andreev, A D ^b   Faux, D A ^b   O'Reilly, E P ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Excitons; GaN; Piezoelectric potential; Quantum dots

Indexed keywords

BINDING ENERGY; COULOMB BLOCKADE; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; EXCITONS; GALLIUM NITRIDE; HOLE MOBILITY; PERMITTIVITY; PIEZOELECTRIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS; SURFACES; WETTING;

GAN; PIEZOELECTRIC POTENTIALS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1642377517     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.039     Document Type: Conference Paper

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