Huang-Rhys side-bands in the emission line of a single InAs quantum dot

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 336-340

  Favero, I ^a   Cassabois, G ^a   Darson, D ^a   Voisin, C ^a   Tignon, J ^a   Delalande, C ^a   Roussignol, Ph ^a   Ferreira, R ^a   Gerard J M ^b  

^a ECOLE NORMALE SUPÉRIEURE   (France)

^b CEA GRENOBLE   (France)

Author keywords

Micro photoluminescence; Phonon; Quantum dot

Indexed keywords

ACOUSTICS; CHARGE COUPLED DEVICES; PHONONS; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS;

COHERENCE RELAXATION; MICRO-PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1642312432     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.043     Document Type: Conference Paper

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