Analytical models for polarization-induced carriers

Semiconductor Science and Technology

Volumn 19, Issue 3, 2004, Pages 446-450

  Ridley, B K ^a  

^a UNIVERSITY OF ESSEX   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; HOLE DENSITY; POLARIZATION INDUCED CARRIERS; WURTZITE STRUCTURES;

CARRIER CONCENTRATION; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRONIC DENSITY OF STATES; ELECTROSTATICS; GALLIUM NITRIDE; POLARIZATION;

HETEROJUNCTIONS;

EID: 1642285128     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/3/027     Document Type: Article

References (5)

1. Eastman L F et al 2002 Progress in Nitride-Based Microwave HEMTS: 28th Symposium on Compound Semiconductors (Tokyo, October 2001) Inst. Phys. Conf. Ser. 170 p 1
2. Ridley B K, Ambacher O and Eastman L F 2000 Semicond. Sci. Technol. 15 270
3. Ridley B K 2000 Appl. Phys. Lett. 77 990
4. Shealy J R, Prunty T R, Chumbs E M and Ridley B K 2003 J. Cryst. Growth. 250 7
5. Jena D, Heikman S, Green D, Buttari D, Coffie R, Xing H, Keller S, DenBaars S, Speck J S and Mishra U K 2002 Appl. Phys. Lett. 81 4395