Field-effect transistor based on organosoluble germanium nanoclusters

Applied Organometallic Chemistry

Volumn 19, Issue 4, 2005, Pages 530-537

  Watanabe, Akira ^a   Hojo, Fusao ^b   Miwa, Takao ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Field effect transistor; Germanium nanocluster; Polygermane

Indexed keywords

AMPLIFICATION; COATING TECHNIQUES; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GERMANIUM COMPOUNDS; ORGANOMETALLICS; REACTION KINETICS; SOLUBILITY;

GERMANIUM NANOCLUSTERS; ONE-POT REACTIONS; POLYGERMANE; STRUCTURAL PROPERTIES;

NANOSTRUCTURED MATERIALS;

ALKYL GROUP; CHLORINE; GERMANIUM DERIVATIVE; REAGENT; TETRAHYDROFURAN;

ARTICLE; CHEMICAL REACTION; CHEMICAL STRUCTURE; CONDUCTANCE; ENERGY; GRIGNARD REACTION; HEAT TREATMENT; NANOPARTICLE; SEMICONDUCTOR; SIGNAL PROCESSING; SOLUBILITY; STRUCTURE ANALYSIS;

EID: 16344381734     PISSN: 02682605     EISSN: None     Source Type: Journal    
DOI: 10.1002/aoc.857     Document Type: Article

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