Measurements, modelling and electrical simulations of lateral PIN photodiodes in thin film-SOI for high quantum efficiency and high selectivity in the UV range

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 55-58

  Afzalian, A ^a   Flandre, D ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL SIMULATION; HIGH QUANTUM EFFICIENCY; HIGH SELECTIVITY; LATERAL PIN PHOTODIODES;

EID: 16244422816     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256809     Document Type: Conference Paper

References (6)

1. D. Flandre and al., "Fully-depleted SOI CMOS technology for heterogenous micropower, high-temperature or RF Microsystems", Solid-State Electronics, vol. 45 (2001), pp 541-549.
2. T.K. Woodward, A. Krishnamoorthy, "1-Gb/s Integrated Optical Detectors and Receivers in Commercial CMOS Technologies", IEEE J.of Select. Topics in Q. EIecton., vol, 5, no. 2, 1999, pp 146-156.
3. S. M. Sze, "The Physics of Semiconductor Devices", New York: Wiley, 1981.
4. M. Emsley, O. Dosunmu, S. Ünlü, "High-Speed Resonant-Cavity-Enhanced Silicon Photodetectors on Reflecting Silicon-on-Insulalor Substrates," IEEE Photonics Technology Letters, vol. 14, no. 4, pp. 519-521, April 2002.
5. P. Jespers, F Van De Wiele, M. White, "Solid State Imaging", NATO Advanced Study Institutes Series, Series E Applied Sciences, Noordhofflnternational Publishing, 1976.
6. Z. Knittl, "Optic of Thin Films", Wiley series in Pure and applied Optics, 1976.