Microstructure of Al/α-Al2O3 interface fabricated by surface activated bonding at room temperature

Materials Science Forum

Volumn 294-296, Issue , 1999, Pages 329-332

  Akatsu, T ^a,c   Hosoda, N ^a   Suga, T ^a   Ruhle M ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Al; Surface Activated Bonding; TEM; Al2O3

Indexed keywords

EID: 16244422254     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (6)

1. T. Suga, Y. Takahashi, H. Takagi, B. Gibbesch and G. Elssner, 1992, Acta metall, mater., 40 Suppl., S133-137.
2. T. Suga, K. Miyazawa and H. Takagi, 1990, J. Japan Inst. Metals, 54 [9], pp-935-943
3. T. Akatsu, G. Sasaki, N. Hosoda and T. Suga, 1997, J. Mat. Res., 12 [13], pp.852-856
4. A. Strecker, U. Salzberger, and J. Mayer, 1993, Prakt. Metallogr., 30, 48.
5. to be published.
6. not published.