Microstructure and strength of Al-sapphire interface by means of the surface activated bonding method

Journal of Materials Research

Volumn 12, Issue 3, 1997, Pages 852-856

  Akatsu, T ^a   Sasaki, G ^a,b   Hosoda, N ^a   Suga, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; DISSIMILAR MATERIALS; MICROSTRUCTURE; SAPPHIRE; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

BEAM IRRADIATION; METAL CERAMICS SYSTEMS; SURFACE ACTIVATED BONDING; ULTRAHIGH VACUUM;

INTERFACES (MATERIALS);

EID: 0031096245     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1997.0124     Document Type: Article

References (7)

1. T. Suga, Bull Jpn. Inst. Metals (in Japanese) 29, 944 (1990).
2. T. Suga, Y. Takahashi, H. Takagi, B. Gibbesch, and G. Elssner, Acta Metall. Mater. 40, Suppl., S133-S137 (1992).
3. M. Florjancic, W. Mader, M. Rühle, and M. Turwitt, J. Phys. 46, C4-129 (1985).
4. M. Kuwabara, J. C. H. Spence, and M. Rühle, J. Mater. Res. 4, 972-977 (1989).
5. G. Gutekunst, J. Mayer, and M. Rühle, Scripta Metall. Mater. 31 (8), 1097 (1994).
6. J. Mayer, W. Mader, F. O. Phillipp, C. P. Flynn, and M. Rühle, Inst. Phys. Conf. Ser. No. 98: Chap. 8, EMAG-MICRO 89 (1989), Vol. 1, pp. 349-354.
7. F. S. Ohuchi and M. Kohyama, J. Am. Ceram. Soc. 74 (6), 1163 (1991).