10GHz low phase noise fully integrated VCOs in 130nm high resistivity CMOS/SOI for 40Gbits/s datacom

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2004, Pages 174-176

  Axelrad, D ^a   De Foucauld, E ^a   Vincent, P ^a   Belleville, M ^a   Gaffiot, F ^b  

^a CEA LETI   (France)

^b ECOLE CENTRALE DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DATA ACQUISITION; DIELECTRIC MATERIALS; ELECTRIC IMPEDANCE; ELECTRIC POWER UTILIZATION; ELECTRIC RESISTANCE; INSULATION; INTERCONNECTION NETWORKS; MICROWAVES; RESONATORS; TRANSISTORS;

BY-PASS FILTERS; OSCILLATION FREQUENCY; PHASE NOISE; SECOND HAMONIC FILTER;

VARIABLE FREQUENCY OSCILLATORS;

EID: 16244388907     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. N. Fong and al, "A 40 GHz VCO with 9 to 15% tuning range in 0.13μm SOI CMOS", VLSI Circuits Digest of Technical Papers, 2002, pp. 186-189, June 2002
2. P. Andreani and H. Sjöland, "Tail Current Noise Suppression in RF CMOS VCOs", IEEE J. Solid-State Circuits, Vol. 37, NO. 3, pp 342-348, March 2002
3. J.-P. Raskin and al, "An efficient design tool for transmission line on SIMOX substrates", IEEE International SOI Conference, pp 28-29, 996
4. A.O. Adan and al, "Linearity and Low-Noise Performance of SOIMOSFETs for RF Applications", IEEE International SOI Conference, pp 30-31, 000
5. N. Fong and al, "Accumulation MOS Varactors for 4 to 40 GHz VCOs in SOI CMOS", IEEE International SOI Conference, pp 158-160, 2002