-
1
-
-
0000793973
-
Semiconductor microcavity: Physics and its applications
-
Chinese source
-
Zheng Houzhi. Semiconductor microcavity: Physics and its applications. Chinese Journal of Semiconductors, 1997, 18(7): 481(in Chinese)
-
(1997)
Chinese Journal of Semiconductors
, vol.18
, Issue.7
, pp. 481
-
-
Zheng, H.1
-
2
-
-
0012025366
-
Vertical cavity surface emitting lasers
-
Chinese source
-
Pan Wei, Zhang Xiaoxia, Luo Bin, et al. Vertical cavity surface emitting lasers. Physics, 1999, 28(4): 210(in Chinese)
-
(1999)
Physics
, vol.28
, Issue.4
, pp. 210
-
-
Pan, W.1
Zhang, X.2
Luo, B.3
-
3
-
-
0028543458
-
Performance predictions for vertical cavity semiconductor laser amplifiers
-
Tombling G, Saitoh T, Mukai T. Performance predictions for vertical cavity semiconductor laser amplifiers. IEEE J Quantum Electron, 1994, 30(11): 2491
-
(1994)
IEEE J Quantum Electron
, vol.30
, Issue.11
, pp. 2491
-
-
Tombling, G.1
Saitoh, T.2
Mukai, T.3
-
4
-
-
0035279725
-
Optical gain-bandwidth product of vertical cavity laser amplifiers
-
Piprek J, Björlin E S, Bowers J E. Optical gain-bandwidth product of vertical cavity laser amplifiers. Electron Lett, 2001, 37(5): 298
-
(2001)
Electron Lett
, vol.37
, Issue.5
, pp. 298
-
-
Piprek, J.1
Björlin, E.S.2
Bowers, J.E.3
-
5
-
-
0036504349
-
Vertical cavity semiconductor optical amplifiers: Comparison of Fabry-Pérot and rate equation approaches
-
Royo P, Koda R, Coldren L A. Vertical cavity semiconductor optical amplifiers: Comparison of Fabry-Pérot and rate equation approaches. IEEE J Quantum Electron, 2002, 38(3): 279
-
(2002)
IEEE J Quantum Electron
, vol.38
, Issue.3
, pp. 279
-
-
Royo, P.1
Koda, R.2
Coldren, L.A.3
-
6
-
-
2542508770
-
Long wavelength vertical-cavity semiconductor optical amplifier
-
Björlin E S, Riou B, Abraham P, et al. Long wavelength vertical-cavity semiconductor optical amplifier. IEEE J Quantum Electron, 2001, 37(2): 274
-
(2001)
IEEE J Quantum Electron
, vol.37
, Issue.2
, pp. 274
-
-
Björlin, E.S.1
Riou, B.2
Abraham, P.3
-
7
-
-
0037426953
-
1.3 μm GaInNAs optically-pumped vertical cavity semiconductor optical amplifier
-
Calvez S, Clark A H, Hopkins J M, et al. 1.3 μm GaInNAs optically-pumped vertical cavity semiconductor optical amplifier. Electron Lett, 2003, 39(1): 100
-
(2003)
Electron Lett
, vol.39
, Issue.1
, pp. 100
-
-
Calvez, S.1
Clark, A.H.2
Hopkins, J.M.3
-
8
-
-
0344951093
-
Nonlinear gain in vertical-cavity semiconductor optical amplifiers
-
Sánchez M, Wen P, Gross M, et al. Nonlinear gain in vertical-cavity semiconductor optical amplifiers. IEEE Photonics Technol Lett, 2003, 15(3): 507
-
(2003)
IEEE Photonics Technol Lett
, vol.15
, Issue.3
, pp. 507
-
-
Sánchez, M.1
Wen, P.2
Gross, M.3
-
9
-
-
0022114784
-
A comparison of active and passive optical bistability in semiconductors
-
Adams M J, Westlake H J, O'Mahony M J, et al. A comparison of active and passive optical bistability in semiconductors. IEEE J Quantum Electron, 1985, 21(9): 1498
-
(1985)
IEEE J Quantum Electron
, vol.21
, Issue.9
, pp. 1498
-
-
Adams, M.J.1
Westlake, H.J.2
O'Mahony, M.J.3
-
10
-
-
2942696110
-
Influence of spontaneous emission factor on the bifurcation and chaos behavior of VC-SEL under large signal modulation
-
Chinese source
-
Deng Guo, Pan Wei, Luo Bin, et al. Influence of spontaneous emission factor on the bifurcation and chaos behavior of VC-SEL under large signal modulation. Chinese Journal of Lasers, 2004, 31(3): 293(in Chinese)
-
(2004)
Chinese Journal of Lasers
, vol.31
, Issue.3
, pp. 293
-
-
Deng, G.1
Pan, W.2
Luo, B.3
-
11
-
-
0033348859
-
Measurements and modeling of reflective bistability in 1.55 μm laser diode amplifiers
-
Pakdeevanich P, Adams M J. Measurements and modeling of reflective bistability in 1.55 μm laser diode amplifiers. IEEE J Quantum Electron, 1999, 35(12): 1894
-
(1999)
IEEE J Quantum Electron
, vol.35
, Issue.12
, pp. 1894
-
-
Pakdeevanich, P.1
Adams, M.J.2
-
12
-
-
0344017436
-
Switching power dependence on detuning and current in bistable diode laser amplifiers
-
Pan Z, Lin H, Dagenais M. Switching power dependence on detuning and current in bistable diode laser amplifiers. Appl Phys Lett, 1991, 58(7): 687
-
(1991)
Appl Phys Lett
, vol.58
, Issue.7
, pp. 687
-
-
Pan, Z.1
Lin, H.2
Dagenais, M.3
-
13
-
-
0034240238
-
Study of bistable characteristics of long external cavity semiconductor lasers using expression of threshold carrier density
-
Chinese source
-
Chen Jianguo, Li Yan, Lu Yang, et al. Study of bistable characteristics of long external cavity semiconductor lasers using expression of threshold carrier density. Acta Optica Sincia, 2000, 20(8): 1015(in Chinese)
-
(2000)
Acta Optica Sincia
, vol.20
, Issue.8
, pp. 1015
-
-
Chen, J.1
Li, Y.2
Lu, Y.3
-
14
-
-
0035428374
-
Effect of wavelength dependence of reflectivity at AR-coating facets on tuning range of external-cavity semiconductor lasers
-
Chinese source
-
Pan Wei, Zhang Xiaoxia, Luo Bin, et al. Effect of wavelength dependence of reflectivity at AR-coating facets on tuning range of external-cavity semiconductor lasers. Acta Optica Sincia, 2001, 21(8): 975(in Chinese)
-
(2001)
Acta Optica Sincia
, vol.21
, Issue.8
, pp. 975
-
-
Pan, W.1
Zhang, X.2
Luo, B.3
-
15
-
-
13944258163
-
Study on nonlinear dynamics of vertical-cavity surface-emitting lasers with multiple external optical feedbacks
-
Chinese source
-
Li Xiaofeng, Pan Wei, Luo Bin, et al. Study on nonlinear dynamics of vertical-cavity surface-emitting lasers with multiple external optical feedbacks. Chinese Journal of Lasers, 2004, 31(12): 1450(in Chinese)
-
(2004)
Chinese Journal of Lasers
, vol.31
, Issue.12
, pp. 1450
-
-
Li, X.1
Pan, W.2
Luo, B.3
-
16
-
-
11844256193
-
Equivalent circuit model of mobile
-
Chinese source
-
Zhang Bin, Ruan Gang, Xue Lechuan. Equivalent circuit model of mobile. Chinese Journal of Semiconductors, 1999, 20(4): 349(in Chinese)
-
(1999)
Chinese Journal of Semiconductors
, vol.20
, Issue.4
, pp. 349
-
-
Zhang, B.1
Ruan, G.2
Xue, L.3
-
17
-
-
0035467406
-
DC model and bistable characteristics of resonant tunneling diode
-
Chinese source
-
Niu Pingjuan, Guo Weilian, Liang Huilai, et al. DC model and bistable characteristics of resonant tunneling diode. Chinese Journal of Semiconductors, 2001, 22(9): 1171(in Chinese)
-
(2001)
Chinese Journal of Semiconductors
, vol.22
, Issue.9
, pp. 1171
-
-
Niu, P.1
Guo, W.2
Liang, H.3
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