In situ observation for semiconductor solution growth using a near-infrared microscope

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages 193-200

  Inatomi, Y ^a   Kikuchi, M ^b   Nakamura, R ^c   Kuribayashi, K ^a   Jimbo, I ^b  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b TOKAI UNIVERSITY   (Japan)

^c Ishikawajima Jet Service Co   (Japan)

Author keywords

A1. Convection; A1. Magnetic fields; A1. Optical microscopy; A1. Surface structure; A3. Liquid phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

ACTIVATION ENERGY; CRYSTAL STRUCTURE; HEAT CONVECTION; INFRARED DEVICES; LIQUID PHASE EPITAXY; MAGNETIC FIELDS; NUCLEATION; OPTICAL MICROSCOPY; SOLUTIONS; SURFACE STRUCTURE;

KINETIC COEFFICIENTS; MORPHOLOGICAL CHANGES; SEMICONDUCTING III-V MATERIALS; SURFACE ORIENTATION;

SEMICONDUCTOR GROWTH;

EID: 15844421579     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.10.082     Document Type: Conference Paper

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