Strained heteroepitaxy on nanomesas: A way toward perfect lateral organization of quantum dots

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages 305-316

  Bavencoffe, Maxime ^a   Houdart, Eglantine ^a   Priester, Catherine ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

A1. Nanopatterned substrates; A3. Molecular beam epitaxy; A3. Quantum boxes; A3. Self organization; B2. Semiconducting Ge and Si

Indexed keywords

EPITAXIAL GROWTH; ETCHING; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PARAMETER ESTIMATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SUBSTRATES;

NANOPATTERNED SUBSTRATES; QUANTUM BOXES; SELF ORGANIZATION; SHAPE CALIBRATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 15844418278     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.10.145     Document Type: Conference Paper

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14. All the results reported here keep qualitatively unchanged when the dangling bond cost varies from. 3 to. 4 eV
15. Such grooves do not correspond to the samples described in Ref. [1], but we have calculated them for their potential application