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Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 301-304

Oxidization process of CVD diamond (1 0 0):H 2 × 1 surfaces

(2) Nakamura, Jun a Ito, Toshimichi a

a OSAKA UNIVERSITY (Japan)

Author keywords

(1 0 0); CVD diamond; Hydrogen terminated surface; Oxygen terminated surface; STM; Surface structure

Indexed keywords

ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; HYDROGEN; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE; SURFACE TREATMENT;

CARBON MOBOANHYDRIDES; CVD DIAMOND; HYDROGEN-TERMINATED SURFACE; OXYGEN-TERMINATED SURFACE; STM;

DIAMONDS;

EID: 15844417964 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2004.12.005 Document Type: Conference Paper

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.