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Volumn 74, Issue 13, 1999, Pages 1830-1832

Nucleation of chemical vapor deposited silicon nitride on silicon dioxide

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; COALESCENCE; EVAPORATION; FREE ENERGY; INTERFACES (MATERIALS); INTERFACIAL ENERGY; NUCLEATION; OXIDATION; SILICA; STOICHIOMETRY; WETTING;

EID: 0032608178     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123100     Document Type: Article
Times cited : (8)

References (12)
  • 7
    • 85034176954 scopus 로고    scopus 로고
    • note
    • 4, we have used a stopping power of 44 eV/Å. After correcting for path length and kinematic effects, the rate of energy loss is 185 eV per Å depth.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.