High tangential signal sensitivity GaAs planar doped barrier diodes for microwave/millimeter-wave power detector applications

IEEE Microwave and Wireless Components Letters

Volumn 15, Issue 3, 2005, Pages 150-152

  Hu, Zhirun ^a   Van Tuyen, Vo ^a   Rezazadeh, Ali A ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

Detectors; Planar doped barrier (PDB) diodes; RF power detection; Sensors; Tangential signal sensitivity (TSS); Voltage sensitivity

Indexed keywords

BANDWIDTH; FREQUENCIES; MICROWAVES; MILLIMETER WAVES; PARAMETER ESTIMATION; SCHOTTKY BARRIER DIODES; SENSORS; SIGNAL SYSTEMS; TEMPERATURE DISTRIBUTION;

PLANAR DOPED BARRIER (PDB) DIODES; RF POWER DETECTION; TANGENTIAL SIGNAL SENSITIVITY (TSS); VOLTAGE SENSITIVITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 15844391318     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2005.844204     Document Type: Article

References (11)

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