Experimental verification of barrier height temperature dependence in GaAs planar doped barrier diodes

Electronics Letters

Volumn 39, Issue 3, 2003, Pages 324-326

  Van Tuyen, V ^a   Nadia, F ^a   Hu, Zhirun ^a   Rezazadeh, A A ^b  

^a KING'S COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; FABRICATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

PLANAR DOPED BARRIER DIODES;

SEMICONDUCTOR DIODES;

EID: 0037421781     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030205     Document Type: Article

References (6)

1. MALIK, R.J., AUCOIN, T.R., ROSS, R.L., BOARD, K., WOOD, C.E.C., and EASTMAN, L.F.: 'Planar doped barrier diodes in GaAs by molecular bean epitaxy', Electron. Lett., 1980, 16, pp. 836-837
2. KEARNEY, M.J., KELLY. M.J., CONDIE, A., and DALE, I.: 'Temperature dependent barrier heights in bulk unipolar diodes leading to improved temperature stable performance', Electron. Lett., 1990, 26, pp. 671-672
3. KEARNEY, M.J., and DALE, I.: 'GaAs planar doped barrier diodes for mixer and detector applications', GEC J. Res., 1990, 8, pp. 1-12
4. SZE, S.M.: 'Physics of semiconductor devices' (Wiley, New York, 1981)
5. SHUR, M.: 'Spill-over effects in planar doped barrier devices', Appl. Phys. Lett., 1985, 47, pp. 869-871
6. Silvaco ATLAS Manual, Version 1.5.0, April 1997, Silvaco International, Santa Clara, USA