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Volumn 17, Issue 10, 2005, Pages 1679-1686
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Transient picosecond Raman studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure
a a a b b c |
Author keywords
[No Author keywords available]
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Indexed keywords
DIODES;
ELECTRIC FIELD EFFECTS;
ELECTRIC FIELDS;
ELECTRONS;
LIGHT SCATTERING;
MOLECULAR BEAM EPITAXY;
RAMAN SPECTROSCOPY;
SEMICONDUCTING GALLIUM ARSENIDE;
VELOCITY CONTROL;
CARRIER SCATTERING;
ELECTRON VELOCITY DISTRIBUTION;
HOLE VELOCITY OVERSHOOTS;
SEMICONDUCTOR NANOSTRUCTURES;
NANOSTRUCTURED MATERIALS;
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EID: 15744382490
PISSN: 09538984
EISSN: None
Source Type: Journal
DOI: 10.1088/0953-8984/17/10/021 Document Type: Article |
Times cited : (2)
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References (19)
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