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Volumn 17, Issue 10, 2005, Pages 1679-1686

Transient picosecond Raman studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRONS; LIGHT SCATTERING; MOLECULAR BEAM EPITAXY; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; VELOCITY CONTROL;

EID: 15744382490     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/10/021     Document Type: Article
Times cited : (2)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.