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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 19, 2001, Pages 1953311-1953317

Field-induced transient hole transport in an Al0.3Ga0.7As-based p-i-n nanostructure studied by picosecond Raman spectroscopy

(4) Chen, Y a Tsen, K T a Sankey, O F a Ferry, D K b

a ARIZONA STATE UNIVERSITY (United States)

b Arizona State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ARSENIC; GALLIUM;

ARTICLE; ELECTRIC FIELD; ELECTRON TRANSPORT; RAMAN SPECTROMETRY; SIMULATION; STRUCTURE ANALYSIS; SYSTEM ANALYSIS; VELOCITY;

EID: 0035891042 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (2)

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