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Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 88, Issue 3, 2005, Pages 36-43

Electrical properties of SiO2 films deposited by photon-assisted CVD with vacuum-ultraviolet excimer lamp

(3) Motoyama, Yoshikazu a,b Kurosawa, Kou a Yokotani, Atushi a

a UNIVERSITY OF MIYAZAKI (Japan)

b Miyazaki Oki Electric Co Ltd (Japan)

Author keywords

Cyclic Si O skeleton; Leakage current; Relative dielectric constant; VUV CVD; Xe2 excimer lamp

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; FILMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; PERMITTIVITY; SEMICONDUCTOR DEVICE MANUFACTURE; ULTRAVIOLET LAMPS; VACUUM TECHNOLOGY;

EXCIMER LAMP; RELATIVE DIELECTRIC CONSTANT; SILICA FILM; VACUUM ULTRAVIOLET CHEMICAL VAPOR DEPOSITION (VUV-CVD);

SILICA;

EID: 15544390650 PISSN: 8756663X EISSN: None Source Type: Journal
DOI: 10.1002/ecjb.10196 Document Type: Article

Times cited : (4)

References (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.