Optimising intrinsic performance of InAlAs/InGaAs Y-branch junction for nonlinear RF operation

Electronics Letters

Volumn 41, Issue 5, 2005, Pages 282-283

  Rashmi, ^a   Bednarz, L ^a   Huynen, I ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC RECTIFIERS; MICROWAVES; NONLINEAR SYSTEMS; POLYNOMIALS; SECOND HARMONIC GENERATION; SEMICONDUCTING INDIUM COMPOUNDS; SWITCHING;

FREQUENCY HARMONICS; MICROWAVE RECTIFIERS; NON-LOCAL TRANSPORT PHENOMENA; Y-BRANCH JUNCTIONS (YBJ);

SEMICONDUCTOR JUNCTIONS;

EID: 15544385741     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20057885     Document Type: Article

References (5)

1. Xu, H.Q.: 'A novel electrical property of three-terminal ballistic junctions and its applications in nanoelectronics', Physica E, 2002, 13, (2-4), pp. 942-945
2. Lewen, R., et al.: 'High frequency characterization of a GaInAs/InP electronic waveguide T-branch switch', J. Appl. Phys., 2002, 91, (4), pp. 2398-2402
3. Bednarz, L., et al.: 'Nanoscaled double Y-branch junction operating as room temperature RF to DC rectifier'. Proc. 4th IEEE Conf. on Nanotechnology, Munich, Germany, August 2004, pp. (IEEE Catalog Number (CD) 04TH8757C-ISBN: 0-7803-8537-3)
4. Rashmi, et al.: 'Nonlinear electron transport properties of InAlAs/InGaAs based Y-branch junctions for microwave rectification at room temperature', Solid State Commun., (in press)
5. ATLAS Manual, Silvaco, 2002