Theoretical investigations of [110] IV-VI lead salt edge-emitting lasers

IEEE Journal of Quantum Electronics

Volumn 41, Issue 3, 2005, Pages 308-315

  Lu, Xiaoliang ^a   Shi, Zhisheng ^a  

^a UNIVERSITY OF OKLAHOMA   (United States)

Author keywords

110 Orientation; IV VI lead salt; Mid IR lasers; Semiconductor lasers

Indexed keywords

APPROXIMATION THEORY; CLADDING (COATING); CRYSTAL ORIENTATION; FERMI LEVEL; INFRARED DEVICES; LIGHT EMISSION; SALTS; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SILICON NITRIDE; THERMAL EFFECTS;

AUGER RECOMBINATION; CAVITY LENGTH; EDGE EMITTING LASERS; FACET REFLECTIVITY; LASER PERFORMANCE; LEAD SALT; MID INFRARED LASERS; SCHOCKLEY-READ RECOMBINATION;

SEMICONDUCTOR LASERS;

EID: 15544372970     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.841607     Document Type: Article

References (17)

1. M. Tacke, "New developments and applications of tunable IR lead salt lasers," Infrared Phys. Technol., vol. 36, pp. 447-463. 1995.
2. A. Joullie, P. Christol, A. N. Barnov, and A. Vicet, "Mid-infrared 2-5 μm heterojunction laser diodes," in Topics in Applied Physics, I. T. Sorokina and K. L. Vodopyanov, Eds. Berlin. Germany: Springer-Verlag, 2003. vol. 89. pp. 1-59.
3. H. I. Schiff, G. I. Mackay, and J. Bechara, "The use of tunable diode laser absorption spectroscopy for atmospheric measurements," in Air Monitoring by Spectroscopic Techniques, M. W. Sigrist, Ed. New York: Wiley, 1994. ch. 5.
4. Z. Feit, M. McDonald, R. J. Woods, V. Archambault, and P. Mak, "Low threshold PbEuSeTe/PbTe separate confinement buried heterostructure diode lasers," Appl. Phys. Lett., vol. 68, pp. 738-740. 1996.
5. U. P. Schliessl and J. Rohr, "60°C lead salt laser emision near 5-μm wavelength," Infrared Phys. Technol., vol. 40, pp. 325-328. 1999.
6. R. Klann, T. Hofer, R. Buhleier, T. Elsaesser, and J. W. Tomm, "Fast recombination processes in lead chalcogenide semiconductors studied via transient optical nonlinearities," J. Appl. Phys., vol. 77, pp. 277-286. 1995.
7. P. C. Findlay, C. R. Pidgeon, B. N. Murdin, A. F. G. van der Meer, A. F. G. Langerak, C. M. Ciesla, J. Oswald, G. Springholz, and G. Bauer, "Suppression of nonradiative scattering processes in narrow gap semiconductors," Phys. Rev. B, vol. B58. pp. 12908-12915, 1998.
8. x Sb quantum wells," Appl. Phys. Lett., vol. 73, pp. 2857-2859, 1998.
9. Z. Shi, X. Lv, F. Zhao, A. Majumdar, D. Ray, R. Singh, and X. J. Yan, "[110] orientated lead salt mid-infrared lasers," Appl. Phys. Lett. vol. 85, pp. 2999-3001, 2004.
10. H. Preier, "Recent advances in lead-chalcogenide diode laser," Appl. Phys., vol. 20, pp. 189-206, 1979.
11. R. Domhaus, G. Nimtz, and B. Schlicht, Narrow-Gap Semiconductors. New York: Springer-Verlag, 1983, ch. 3.
12. V. Altschul and E. Finkman, "Simple approximation for Fermi energy in nonparabolic semiconductors," Appl. Phys. Lett., vol. 58, pp. 942-944, 1991.
13. x TE double heterostructure lasers," IEEE J. Quantum Electron., vol. 13, no. 7. pp. 532-543, Jul. 1977.
14. I. Vurgaftman and J. R. Meyer, "Effects of bandgap, lifetime, and other nonuniformities on diode laser threshoulds and slope efficiencies," IEEE J. Sel. Topics Quantum Electron., vol. 3. no. 2, pp. 475-484, Apr. 1997.
15. J. R. Meyer, I. Vurgaftman, and C. A. Hoffman, "Intersubband all-optical limiter based on thermally induced intervalley transfer," J. Appl. Phys., vol. 81, pp. 7662-7665, 1997.
16. F. Lemke and M. Mocker, "Theoretical investigation of Auger recombination in PbSnTe structures," Phys. Stat. Sol. (b), vol. 167, pp. 219-232, 1991.
17. Z. Shi, "GaSb-PbSe-GaSb double heterostructure mid-infrared lasers," Appl. Phys. Lett., vol. 72, pp. 1272-1274, 1998.