Temperature-dependent NMR study of the impurity state in heavily doped Si:P

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 3, 2005, Pages

  Meintjes, Ernesta M ^a,b   Danielson, Jeremy ^a   Warren Jr , William W ^a  

^a OREGON STATE UNIVERSITY   (United States)

^b UNIVERSITY OF CAPE TOWN   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

PHOSPHORUS; SILICON;

ARTICLE; CONDUCTANCE; HOST; IONIZATION; PHOSPHORUS NUCLEAR MAGNETIC RESONANCE; ROOM TEMPERATURE; SIMULATION; TEMPERATURE DEPENDENCE;

EID: 15444366106     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.035114     Document Type: Article

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