Recrystallization of amorphous layer in ion implanted GaAs - transmission electron microscopy studies

Acta Physica Polonica A

Volumn 90, Issue 4, 1996, Pages 825-828

  Jasinski J ^a   Liliental Weber, Z ^b  

^a UNIVERSITY OF WARSAW   (Poland)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1542607313     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.90.825     Document Type: Article

References (6)

1. J.S. Williams, M.W. Austin, Appl. Phys. Lett. 36, 994 (1980).
2. W.G. Opyd, J.F Gibbons, J.C. Bravman, M.A. Parker, Appl. Phys. Lett. 49, 974 (1986).
3. J. Jasiński, Y. Chen, J. Washburn, H.H. Tan, C. Jagadish, M. Kamińska, Appl. Phys. Lett. 68, 1501 (1996).
4. J.F. Ziegler, J.P. Biersack, U. Littmark, The Stopping and Range of Ions in Solids, Pergamon, New York 1985.
5. Kei-Yu Ko, Samuel Chen, S.-Tong Lee, G. Braunstein, Appl. Phys. Lett. 60, 1223 (1992).
6. Z. Liliental-Weber, F. Namavar, A. Claverie, Ultramicroscopy 52, 570 (1993).