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0021374024
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A mathematical model of the coupled fluid mechanics and chemical kinetics in a chemical vapor deposition reactor
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Coltrin, M.E., Kee, R.E., and Miller, J.A., A Mathematical Model of the Coupled Fluid Mechanics and Chemical Kinetics in a Chemical Vapor Deposition Reactor, J. Electrochem. Soc., Vol.131, pp.425-434 (1984).
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A mathematical model of silicon chemical kinetics in a chemical vapor deposition reactor
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Coltrin, M.E., Kee, R.E., and Miller, J.A., A Mathematical Model of Silicon Chemical Kinetics in a Chemical Vapor Deposition Reactor, J. Electrochem. Soc., Vol.133, pp.1206-1213 (1986).
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A stagnant layer model for the epitaxial growth of silicon from silane in a horizontal reactor
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4
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0025401662
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Flow and heat transfer in CVD reactors: Comparison of raman temperature measurements and finite element model predictions
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Fotiadis, D.I., Bockholt, M., Jensen, K.F, and Richter, W., Flow and Heat Transfer in CVD Reactors: Comparison of Raman Temperature Measurements and Finite Element Model Predictions, J. Crystal Growth, Vol.100. pp.577-599 (1990a).
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Fotiadis, D.I.1
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5
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0025430104
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Transport phenomena in vertical reactors for metalorganic vapor phase epitaxy: I. Effects of heat transfer characteristics, reactor geometry, and operating conditions
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Fotiadis, D.I., Kieda, S., and Jensen, K.F., Transport Phenomena in Vertical Reactors for Metalorganic Vapor Phase Epitaxy: I. Effects of Heat Transfer Characteristics, Reactor Geometry, and Operating Conditions, J. Crystal Growth, Vol.102, pp.441-470 (1990b).
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Fotiadis, D.I.1
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6
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0030259712
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Methods to improve the P/As compositional uniformity of InGaAsP thin films prepared by MOCVD
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Holstein, W.L., Methods to Improve the P/As Compositional Uniformity of InGaAsP Thin Films Prepared by MOCVD, J. Crystal Growth, Vol.167, pp.525-533 (1996)
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Holstein, W.L.1
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Investigations of a passive heat transfer enhancement in electronic cooling systems
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Hung, T.C., Wang, S.K., and Tsai, F.P., Investigations of a Passive Heat Transfer Enhancement in Electronic Cooling Systems, Int. Electron Devices and Materials Symposium, F2-3-P, p.409 (1996).
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Hung, T.C.1
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8
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0031277573
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Simulations of passively enhanced heat transfer across an array of volumetric heat sources
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Hung, T.C., Wang, S.K., and Tsai, F.P., Simulations of Passively Enhanced Heat Transfer Across an Array of Volumetric Heat Sources, J. Communications Numer. Methods in Eng., Vol.13, pp.855-866 (1997).
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Hung, T.C.1
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9
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Solution of the implicit discretized fluid flow equations by operator-splitting
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Issa, R.I., Solution of the Implicit Discretized Fluid Flow Equations by Operator-Splitting, J. Computational Physics, Vol.62, pp.40-65 (1986).
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Solution of the implicit discretized reacting flow equations by operator-splitting
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Issa, R.I., Ahmadi-Befrui, B., Beshay, K.R., and Gosman, A.D., Solution of the Implicit Discretized Reacting Flow Equations by Operator-Splitting, J. Computational Physics, Vol.93, pp.388-410 (1991)
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0001021412
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Mechanistic studies of chemical vapor deposition
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Jasinski, J.M., Meyerson, B.S., and Scott, B.A., Mechanistic Studies of Chemical Vapor Deposition, Annu. Rev. Phys. Chem., Vol.38, pp.109-140 (1987).
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0021626562
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Thermal diffusion effects in chemical vapor deposition reactors
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Jenkinson, J.P., and Pollard, R., Thermal Diffusion Effects in Chemical Vapor Deposition Reactors, J. Electrochem. Soc., Vol.131, pp.2911-2917 (1984).
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Flow phenomena in chemical vapor deposition of thin films
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Jensen, K.F., Einset, E.O., and Fotiadis, D.I., Flow Phenomena in Chemical Vapor Deposition of Thin Films, Annu. Rev. Fluid Mech., Vol.23, pp.197-232 (1991).
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Jensen, K.F.1
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14
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0020152945
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Phenomenological model of the CVD epitaxial reactor
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Juza, J., and Cermak, J., Phenomenological Model of the CVD Epitaxial Reactor, J. Electrochem, Soc., Vol.129, pp.1627-1634 (1982).
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Forced convection in vertical Bridgman configuration with the submerged heater
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Meyer, S., and Ostrogorsky, A.G., Forced Convection in Vertical Bridgman Configuration with the Submerged Heater, J. Crystal Growth, Vol.171, pp.566-576 (1997).
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0001522504
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Complex flow in MOCVD reactors: Horizontal reactors
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Moffat, H.K., and Jensen, K.F., Complex Flow in MOCVD Reactors: Horizontal Reactors, J. Crystal Growth, Vol.77, pp.108-119 (1986).
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Moffat, H.K.1
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0023964157
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Three dimensional flow effects in silicon CVD in horizontal reactors
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Moffat, H.K., and Jensen, K.F., Three Dimensional Flow Effects in Silicon CVD in Horizontal Reactors, J. Electrochem. Soc., Vol.135, pp.459-471 (1988).
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0025399692
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Three dimensional modeling of horizontal chemical vapor deposition I: MOCVD at atmospheric pressure
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A correlation procedure for heat, mass and momentum transfer in three-dimensional parabolic flows
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A calculation procedure for two-dimensional elliptic situations
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Gas-phase depletion and flow dynamics in horizontal MOCVD reactors
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van de Ven, J., Giling, L.J., Raaymakers, M.J., Rutten, G.M.J., Gas-Phase Depletion and Flow Dynamics in Horizontal MOCVD Reactors, J. Crystal Growth, Vol.76, pp.352-372 (1986).
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Enhancements of the SIMPLE method for predicting incompressible fluid flows
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0024641685
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2 particle injection and numerical calculations
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2 Particle Injection and Numerical Calculations, J. Crystal Growth, Vol.94, pp.929-946 (1989).
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0027109718
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Crystal growth in floating zone with phase change and thermo-solutal convection
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