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Journal of Crystal Growth

Volumn 167, Issue 3-4, 1996, Pages 525-533

Methods to improve the P/As compositional uniformity of InGaAsP thin films prepared by MOCVD

(1) Holstein, W L a

a DUPONT COMPANY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; COMPOSITION; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOSPHORUS; PRESSURE EFFECTS; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS; THERMAL GRADIENTS; THIN FILMS;

COMPOSITIONAL UNIFORMITY; DISTRIBUTION COEFFICIENT; GAS PHASE DEPLETION;

FILM GROWTH;

EID: 0030259712 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(96)00295-3 Document Type: Article

Times cited : (9)

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