A Focused Ion Beam Technique to Electrically Contact the Deep Trench Capacitor of a Single Active Memory Cell in the Sub 0.25μm Technology Regime

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 2000, Pages 225-230

  Zimmermann, Gunnar ^a   Johnston, Mark ^b   Christ, Rolf ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b White Oak Semiconductor ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DEPOSITION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC CONTACTS; ELECTRON BEAMS; FAILURE ANALYSIS; FOCUSING; GATES (TRANSISTOR); LEAKAGE CURRENTS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

DEEP TRENCH (DT) TECHNOLOGY; DRAIN LEAKAGE CURRENTS; FOCUSED ION BEAM (FIB);

ION BEAMS;

EID: 1542378271     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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